2008. 6. 10 1/5 semiconductor technical data KMB054N40DB n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for back-light inverter and power supply. features v dss =40v, i d =54a. low drain-source on resistance. : r ds(on) =8.5m (max.) @ v gs =10v : r ds(on) =11m (max.) @ v gs =4.5v super high dense cell design. high power and current handling capability. maximum rating (ta=25 unless otherwise noted) pin connection (top view) gs d 1 2 3 1 2 3 dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l 1. gate 2. drain 3. source m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j kmb 054n40 db marking type name lot no note 1) r thjc means that the infinite heat sink is mounted. note 2) surface mounted on 1 1 pad of 2 oz copper. characteristic symbol n-ch unit drain-source voltage v dss 40 v gate-source voltage v gss 20 v drain current dc@t c =25 (note1) i d 54 a pulsed (note2) i dp 100 drain-source-diode forward current i s 100 a drain power dissipation @t c =25 (note1) p d 45 w @ta=25 (note2) 3.1 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to case (note1) r thjc 2.8 /w thermal resistance, junction to ambient (note2) r thja 40 /w
2008. 6. 10 2/5 KMB054N40DB revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i d =250 a 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 1 a gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1 1.9 3 v drain-source on resistance r ds(on)* v gs =10v, i d =14a - 6.5 8.5 m v gs =4.5v, i d =11a - 8.5 11 v gs =10v, i d =14a, t j =125 - 10.4 14 forward transconductance g fs* v ds =10v, i d =20a - 58 - s dynamic input capacitance c iss v ds =20v, f=1mhz, v gs =0v - 1280 - pf ouput capacitance c oss - 250 - reverse transfer capacitance c rss - 125 - total gate charge v gs =10v q g * v ds =20v, v gs =10v, i d =14a - 25.4 - nc v gs =5v q g * - 13.8 - gate-source charge q gs * - 5.7 - gate-drain charge q gd * - 5.4 - turn-on delay time t d(on) * v dd =20v, v gs =10v i d =1a, r g =6 - 19 - ns turn-on rise time t r * - 16 - turn-off delay time t d(off) * - 60 - turn-off fall time t f * - 14 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =14a - 0.8 1.2 v note>* pulse test : pulse width <300 , duty cycle < 2%
2008. 6. 10 3/5 KMB054N40DB revision no : 0 0.5 011.522.5 20 40 60 80 100 0 6.0v 3.5v v gs =10v 4.0v drain - current i d (a) 0 0 6 15 30 12 18 24 30 drain- source on-resistance r ds(on) (m ? ) 0 12 20 4 8 16 -25 150 50 75 100 125 25 -50 0 -75 v gs =10v, i d =14a c ta=25 junction temperature tj ( ) c fig1. i d - v ds drain current i d (a) drain - source voltage v ds (v) drain source on resistance r ds(on) (m ? ) fig2. r ds(on) -i d fig4. r ds(on) - t j v gs =4.5v v gs =10v gate source volatage v gs (v) 0 1 1.5 40 20 60 80 100 22.533.544.5 v ds =5v -75 -50 -25 0 50 100 75 125 150 25 0 1 4 2 5 3 junction temperature tj ( ) c v gs =v ds i d =250 a gate threshold voltage v th (v) drain current i d (a) fig3. i d - v gs fig5. v th - t j 25 c -55 c 5.0v 4.5v t a =125 c fig6. i s - v sdf 0.2 1 10 0.1 1000 100 0.4 0.8 1.2 1 0.6 reverse drain current i s (a) source - drain forward voltage v sdf (v) ta=25 c ta=125 c
2008. 6. 10 4/5 KMB054N40DB revision no : 0
2008. 6. 10 5/5 KMB054N40DB revision no : 0 fig11. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig12. resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
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